Quote for PH1214-80M Macom Part with NSN 5961-01-577-9318

Part Number:  PH1214-80M
Alternate P/N:  PH121480M
Manufacturer:  macom
NIIN:  15779318
Item Name :  transistor
CAGE Code:  1XVS3
INC Code:  20588
Country:  USA
NCB Code:  01
FSG:  59 Electrical and Electronic Equipment Components
Last Updated:  02-11-2026

Are you looking quote for part PH1214-80M? The Macom-manufactured component (CAGE Code: 1XVS3) is documented under NSN 5961-01-577-9318 as Transistor. For the fastest quote, please complete our RFQ form with details about PH1214-80M. We guarantee a response within 15 minutes.

ASAP Components provides the verified PH1214-80M, classified under INC 20588, FSG 59 Electrical and Electronic Equipment Components, FSC 5961 Semiconductor Devices and Associated Hardware, NIIN 01-577-9318, and NCB 01. Submit your requirements today to receive immediate pricing and availability information.

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NSN Information for Part Number PH1214-80M with NSN 5961-01-577-9318, 5961015779318

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-01-577-9318

Item PartTypeName:

TRANSISTOR

5961015779318NA
CIICHCCESDPMICCriticalityENAC
AA0
Part NumberISCRNVCRNCCHCCMSDSSADC
PH1214-80M523

Characteristics Data of NSN 5961-01-577-9318, 5961015779318

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL AND CERAMIC"
ABHPOVERALL LENGTH0.900 INCHES NOMINAL"
ABKWOVERALL HEIGHT0.217 INCHES NOMINAL"
ABMKOVERALL WIDTH0.400 INCHES NOMINAL"
AGAVEND ITEM IDENTIFICATIONRADAR SYSTEM"
AKPVMOUNTING FACILITY QUANTITY2"
AXGYMOUNTING METHODSLOT"
CTMZIII SEMICONDUCTOR MATERIALSILICON"
FEATSPECIAL FEATURESNPN SILICON MICROWAVE POWER TRANSISTORS, COMMON BASE CONFIGURATION, BROADBAND CLASS C OPERATION, HIGH EFFICIENCY INTER-DIGITIZED GEOMETRY, DIFFUSED EMITTER BALLASTING INTER-DIGITIZED GEOMETRYH, DIFFUSED EMITER BALLASTING RESISTORS, GOLD MET"
ABBHINCLOSURE MATERIALMETAL AND CERAMIC"
ABHPOVERALL LENGTH0.900 INCHES NOMINAL"
ABKWOVERALL HEIGHT0.217 INCHES NOMINAL"
ABMKOVERALL WIDTH0.400 INCHES NOMINAL"
AGAVEND ITEM IDENTIFICATIONRADAR SYSTEM"
AKPVMOUNTING FACILITY QUANTITY2"
AXGYMOUNTING METHODSLOT"
CTMZIII SEMICONDUCTOR MATERIALSILICON"
FEATSPECIAL FEATURESNPN SILICON MICROWAVE POWER TRANSISTORS, COMMON BASE CONFIGURATION, BROADBAND CLASS C OPERATION, HIGH EFFICIENCY INTER-DIGITIZED GEOMETRY, DIFFUSED EMITTER BALLASTING INTER-DIGITIZED GEOMETRYH, DIFFUSED EMITER BALLASTING RESISTORS, GOLD MET"

Schedule B & Trade

End Use : 21320 Semiconductors
Schedule B : 8541500080 (NAICS 334413) Semiconductor devices, nesoi
SITC : 77639 Semiconductor devices, n.E.S.

Identification

ADPE Represents items with no adp components
CRITL The item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
ESD A - No known electrostatic discharge (esd) or electromagnetic interference (emi) sensitivity.
HMIC N - Indicates there is no data in the hmirs and the nsn is in a fsc not generally suspected of containing hazardous materials.
PMIC A - Item does not contain precious metal.

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