Are you looking for a quote on part number MD8155HB? If so, please fill out the form provided below. The national stock number is 5962011887173, and the part is manufactured by Advanced Micro Devices Inc. Description is Microcircuit Memory. The Cage Code for part number MD8155HB is 34335. Please enter as much detail as possible, this information will help us provide you the best quote for your needs. We will get back to you in just 15 minutes!
Part Number MD8155HB Specification |
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Part Number : MD8155HB | Manufacturer : Advanced Micro Devices Inc | NSN : 5962-01-188-7173 (5962011887173) | |
Item Name : Microcircuit Memory | CAGE Code : 34335 | ||
FSC CODE : 5962 Microcircuits Electronic |
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A national stock number (NSN) part is distinguished by a specific number. This number indicates procurement, stocking, and storage of this part through the federal supply system. Part number MD8155HB possess the Federal Supply Group is FSC 5962 Microcircuits Electronic. This part and other NSN parts are an essential part of the defense and military supply chain.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-188-7173 Item Description: Microcircuit Memory | 5962 | 011887173 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Md8155hb | 3 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH50 2 MILLIMETERS MINIMUM AND 51 3 MILLIMETERS MAXIMUM |
MEMORY | ADAT | BODY WIDTH14 8 MILLIMETERS MINIMUM AND 15 6 MILLIMETERS MAXIMUM |
MEMORY | ADAU | BODY HEIGHT2 0 MILLIMETERS MINIMUM AND 2 6 MILLIMETERS MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 5 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATION5820-01-145-4902 MODEMCABLE DRI |
MEMORY | CBBL | FEATURES PROVIDEDBURN IN MIL-STD-883 CLASS B AND HERMETICALLY SEALED AND MONOLITHIC AND STATIC OPERATION AND ELECTROSTATIC SENSITIVE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN37 INPUT |
MEMORY | CRHL | BIT QUANTITY2048 |
MEMORY | CSWJ | WORD QUANTITY256 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC400 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 400 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
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