Are you searching for parts under NSN 5962-01-102-3846? We encourage you to search through our inventory of over 2 billion new and aftermarket parts applicable within the aerospace industry. Owned and operated by ASAP Semiconductor, ASAP Components stocks key parts of NSN 5962-01-102-3846 such as SL82S141-BJA, S82S141I 883B, ROM-PROM HEAD 026, N82S141F, MIL-M-38510-208.
The ASAP method incorporates rigorous quality assurance testing, efficient shipping and handling, and unparalleled customer service. No matter how hard the National Stock Number part is to find, the ASAP team will find a sourcing solution.
We are an AS9120B, ISO 9001:2015 certified and FAA AC 0056B accredited company. We are also the only independent distributor with a NO CHINA SOURCING policy. Submit an RFQ today and experience the ASAP method for yourself.
| Item Name | Microcircuit Memory |
| INC Code | 41015 |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-102-3846 (011023846) |
| NCB Code | USA (01) |
| Part Number | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| SL82S141-BJA | lansdale semiconductor inc | microcircuit memory | Avl | RFQ |
| S82S141I 883B | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
| ROM-PROM HEAD 026 | dla land and maritime | microcircuit memory | Avl | RFQ |
| N82S141F | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
| MIL-M-38510-208 | military specifications | microcircuit memory | Avl | RFQ |
| M38510-20802BJB | military specifications | microcircuit memory | Avl | RFQ |
| M38510-20802BJA | military specifications | microcircuit memory | Avl | RFQ |
| M38510-20802BJ | military specifications | microcircuit memory | Avl | RFQ |
| JM38510-20802BJX | military specifications | microcircuit memory | Avl | RFQ |
| IM5625-CJG | intersil corporation | microcircuit memory | Avl | RFQ |
| HM1-7641-5 | intersil corporation | microcircuit memory | Avl | RFQ |
| H201-3624-04 | raven electronics corporation | microcircuit memory | Avl | RFQ |
| DM54S474J MIL | national semiconductor corporation | microcircuit memory | Avl | RFQ |
| DM54S474J | national semiconductor corporation | microcircuit memory | Avl | RFQ |
| D3624 | intel corporation | microcircuit memory | Avl | RFQ |
| AMD9214DM | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| 9402-00129 | bae systems inc | microcircuit memory | Avl | RFQ |
| 85694600-03 | general dynamics information systems | microcircuit memory | Avl | RFQ |
| 82S141/BJA | e2v inc | microcircuit memory | Avl | RFQ |
| 7849878P001 | lockheed martin corporation | microcircuit memory | Avl | RFQ |
| 6341-1J | mmi amd | microcircuit memory | Avl | RFQ |
| 5962-3820802BJX | military specifications | microcircuit memory | Avl | RFQ |
| 5962-3820802BJB | military specifications | microcircuit memory | Avl | RFQ |
| 5962-3820802BJA | military specifications | microcircuit memory | Avl | RFQ |
| 583R350H01 | northrop grumman systems corporation | microcircuit memory | Avl | RFQ |
| 583R350H01 | fairchild semiconductor corp | microcircuit memory | Avl | RFQ |
| 477-1768-003 | boeing company the | microcircuit memory | Avl | RFQ |
| 477-1336-031 | boeing company the | microcircuit memory | Avl | RFQ |
| 4004785-08 | raytheon technical services company | microcircuit memory | Avl | RFQ |
| 4004785-01 | raytheon technical services company | microcircuit memory | Avl | RFQ |
| 1004487-01 | raytheon technical services company | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND SCHOTTKY AND BIPOLAR AND PROGRAMMABLE AND POSITIVE OUTPUTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/208/USAF/ GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5962-01-102-3846, 5962011023846 | ||||
| 5935-01-278-3059 (5935012783059) | 5905-01-256-1503 (5905012561503) | 5935-01-525-7175 (5935015257175) | 5999-01-504-0324 (5999015040324) | |
| 5965-01-684-1554 (5965016841554) | 5962-01-435-1333 (5962014351333) | 5925-00-103-5151 (5925001035151) | 5945-00-333-1053 (5945003331053) | |
| 5995-01-117-0077 (5995011170077) | 5950-01-127-7165 (5950011277165) | 5925-00-449-3777 (5925004493777) | 5930-01-299-2711 (5930012992711) | |
|
Guaranteed on-time |
|
|
Customized and |
|
|
Over 5100 |
|
|
Complete Purchasing |